Micron has started delivery of 176-layer UFS 3.1 nand for smartphones. The mobile memory offers higher bandwidth and lower latency and is more efficient than previous generations, the manufacturer claims.
Micron is supplying 176-layer UFS 3.1 Nand memory in bulk for smartphone manufacturers to integrate into their upcoming high-end devices. The memory manufacturer mentions as advantages, among other things, the faster launch of apps and multitasking improvements. For example, mixed workload performance would be 35 percent higher than Micron’s 96-layer UFS 3.1 nand. The latency in read and write would be improved by 35 percent.
Writing 7GB files of 4K video via mobile internet to 256GB NAND would be 15 percent faster with the new generation than with the 96-layer predecessor, Micron further claims. The company also mentions improvements in quality of service and total bytes written, for better latency and stability and longevity, respectively. The company announced the arrival of 176-layer nand in November last year.
Samsung and SK Hynix are now also at 176 layers for their products with stacked nand memory.