Samsung announces some specifications of its gddr6 vram

Samsung has announced that the company is developing gddr6 ram. According to the manufacturer, this graphical memory can handle a throughput of 16Gbit/s at a lower voltage than gddr5.

The gddr6 ram is named in a advance notice of some of the award-winning products that will be on display at CES 2018. The full announcement with all specifications is therefore likely to be delayed until the trade fair starts on January 7, 2018.

What Samsung does mention in the pre-announcement is that the memory can process images at 16Gbit/s at a voltage of 1.35V, compared to the 8Gbit/s and 1.5V of gddr5. Incidentally, the fastest gddr5x memory currently available can handle a maximum speed of 14Gbit/s. Anandtech speculates that Samsung uses 8Gb chips, which are baked on an 18nm process.

Last year, Samsung already announced that the manufacturer wants to start producing gddr6 memory from 2018, with which the company, given the announcement during CES 2018, seems to be on schedule. Micron has announced that the company wants to release gddr6 memory this year and SK Hynix has already shown a gddr6 chip.