Samsung 870 EVO 2.5″ SSD with up to 4TB storage capacity appears online

Samsung seems to be working on a new 2.5″ SSD with SATA interface. According to WinFuture, the 870 EVO has appeared at various retailers and shows great similarities with the current 860 EVO. It is not yet known when the SSD will be available.

The SSD would have appeared at web shops in Europe and the US, writes German tech website WinFuture, which more often publish information about unannounced products. It would be a 2.5″ SSD with SATA interface, which should follow the current 2.5″ variant of the Samsung 860 EVO. It is not yet clear whether the 870 EVO will also be available in other form factors at a later date. For example, previous SSDs in the 800 series were also available as an mSATA variant. The Samsung 860 and 850 EVO were also available as SATA SSDs in M.2 form factor.

Pictures of the alleged Samsung 870 EVO SSD. Images via WinFuture

The specifications of the 870 EVO also show great similarities with those of the current 860 EVO. The sequential read and write speeds of the new variant are both 10MB/s higher, but the storage capacity of up to 4TB and the total bytes written of 2400TB remain the same. The random read and write speeds are not yet known.

The 870 EVO is expected to use tlc-nand, just like the current 860 EVO. Samsung previously came with 870 QVO SSDs, which use qlc memory and come with a maximum of 8TB storage capacity. According to WinFuture, the 870 EVO SSDs cost between 70 and 450 euros, depending on the capacity. It is not yet clear when Samsung will announce the SSD series.

Samsung 800 Series SSDs
Series Samsung 870 EVO Samsung 860 EVO Samsung 850 EVO Samsung 840 EVO
Storage capacity 250GB, 500GB, 1TB, 2TB, 4TB 250GB, 500GB, 1TB, 2TB, 4TB 120GB, 250GB, 500GB, 1TB, 2TB, 4TB 120GB, 250GB,
500GB, 750GB 1TB
form factor 2.5″ 2.5″, mSATA, M.2 2.5″, mSATA, M.2 2.5″, mSATA
Interface SATA-600 SATA-600 SATA-600 SATA-600
Nand Memory 3 bits per cell (tlc)? 3 bits per cell (tlc) 3 bits per cell (tlc) 3 bits per cell (tlc)
Dram cache nnb max. 4GB lpddr4
(on 4TB model)
max. 1GB lpddr2
(from 1TB model)
max. 1GB lpddr2
(from 750GB model)
Sequential speeds (max.) Read: 560MB/s
Write: 530MB/s
Read: 550MB/s
Write: 520MB/s
Read: 540MB/s
Write: 520MB/s
Read: 540MB/s
Write: 520MB/s
Random speeds (max.) nnb Read: 98,000 iops
Write: 90,000 iops
Read: 98,000 iops
Write: 90,000 iops
Read: 98,000 iops
Write: 90,000 iops
Endurance (TBW) 2400TB 2400TB 300TB Not specified by manufacturer
Guarantee 5 years 5 years 5 years 3 years

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