‘Samsung will produce NAND memory with more than 300 layers from next year’

Samsung may plan to start producing NAND memory with more than 300 layers next year. DigiTimes reports this. According to that medium, Samsung plans to subsequently release 3D NAND memory with 430 layers.

DigiTimes writes that Samsung’s ninth-generation V-NAND consists of ‘more than 300 layers’, although the exact number of layers is not known. Production is planned for 2024, reports Blocks and Files. Samsung may use its double stacking technique for this production. First, a stack of 3D Nand is produced on a 300mm wafer. Then another stack is produced on top of that. This should maximize yields, although production also takes longer.

Later, according to DigiTimes, Samsung is planning 430-layer NAND memory, although it is not known exactly when production will start. Samsung may be using a triple stacking technique, in which three Nand stacks are combined instead of two. Samsung reported last year that it wants to produce nand memory with ‘more than a thousand’ layers by 2030. The company currently produces nand memory with up to 236 layers.

Samsung is not the only manufacturer working on NAND memory with more than 300 layers. SK Hynix unveiled its 321-layer NAND memory earlier this month at the Flash Memory Summit in California. That manufacturer will produce three stacks of nand on top of each other to reach that number of layers. SK hynix will start mass production of its 321-layer 3D Nand in 2025, writes AnandTech.

In general, more layers equal higher capacity per memory chip. This makes it possible to produce SSDs with larger storage capacities. Also, production costs per terabyte normally decrease as the number of layers increases.

Samsung’s current generation V-NAND with 236 layers. Source: Samsung