Toshiba starts production of 24nm flash

Japanese semiconductor company Toshiba has started mass production of nand flash memory with a feature size of 24nm. The smaller production process should lead to cheaper storage.

Toshiba’s semiconductor division has launched the production of 24nm multilevel cell memory with two bits per memory cell. The memory density of the chips will initially be 64 GB, good for chips with a storage capacity of 8 GB. At a later stage, the company will also produce MLC memory with three bits per cell at 24nm. Those chips would initially be produced in capacities of 32Gb.

Toshiba’s memory uses Toggle DDR technology, which should increase data rates. Toshiba’s 24nm memory chips will be used in solid state drives and as storage medium in smartphones and tablets. The reduction in the production process from 32nm and larger to 24nm should make memory cheaper and enable larger capacities in smaller chips.