Toshiba has announced that it will produce UFS storage based on 3D flash memory. The storage should be faster than the current generation in both write to and read memory. It is unknown when the new chips will appear in devices.
Toshiba uses its BiCS Flash technique for ufs storage. That’s 64-layer 3D flash memory. According to the manufacturer, the use of 64 layers allows higher capacities and lower power consumption than previous generations.
This concerns ufs 2.1 storage that can be used in smartphones, tablets, VR systems and ar systems, among other things. With the 64GB version, reading from the storage goes at 900MB/s according to Toshiba, writing to it goes at 180MB/s. Current ufs storage in smartphones often achieve speeds of between 700 and 800MB/s. Writing to storage is already possible with speeds above 200MB/s on some smartphones.
The ufs storage comes in variants with capacities of 32GB, 64GB, 128GB and 256GB. That is in line with the storage capacities that current smartphones and tablets now often offer. It is not yet known when the new storage will be in devices.
Update, 6:35: This article originally stated that it was 96-layer 3D memory. That was incorrect, it is 64 layers.