Samsung will start mass production of 3nm chips with gate-all-around transistors and Multi-Bridge-Channel FET in the first half of 2022. 2nm production should then start in 2025. This is stated on the company’s current roadmap.
After the first 3nm chips in the first half of 2022, the company’s 3nm process will receive an update for a new generation of chips in 2023. After that, Samsung is preparing for the switch to 2nm. The latter node is still in an early stage of development, but mass production should start in 2025. Samsung reported this during its Samsung Foundry Forum.
Samsung’s first-generation 3nm node allows for a 25 percent reduction in chip area versus 5nm. The performance of similar chips can be 30 percent higher at 3nm or the energy consumption can be halved compared to 5nm, according to the claim. The yield of 3nm, the yield of functioning chips, ‘approaches’ that of the current 4nm node, Samsung assures. The company has not yet reported details about the 2nm generation.
Samsung uses gate-all-around or gaa transistors with Multi-Bridge-Channel FET for 3nm. Mbcfet is Samsung’s name for its gaa process in which it applies nanosheets to the channels surrounded by the gate. The current chip generations are still finfets where the gate is placed over a ‘fin’. Samsung also continues to improve its finfet production. For example, the company reports the arrival of a new cheap and efficient 17nm process.