Samsung starts mass production of 16Gbit chips lpddr5 on 10nm process with EUV

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Samsung has started mass production of 16Gbit lpddr5 chips. The company makes the chips using a third-generation 10nm class process using EUV machines. According to Samsung, the memory is 16 percent faster than 12Gbit-lppdr5.

The 16Gbit lpddr5 chips work at 6.4Gbit / s, where Samsung currently runs 12Gb lpddr5 at 5.5Gbit / s. Samsung uses eight 16Gbit chips for packages of 16GB. Currently, the manufacturer has to use eight 12Gbit chips and four 8Gbit chips to get to 16GB. In addition, according to the manufacturer, the new memory is thirty percent thinner than its predecessor, with all the advantages for smartphones that entails, such as freeing up more space for other parts.

Samsung makes the 16Gbit chips using a ‘1z process’, or the third generation of its 10nm node. The company uses euv machines for this. For processors, euv has been used for certain chip layers for some time and now that the technology is more mature, manufacturers are also using it for memory production. Euv machines use a wavelength of 13.5 nm for the exposure step, which means that smaller structures can be applied more accurately and faster. It is not known to what extent Samsung uses euv in the 1z production. At the beginning of this year, the company announced that it would fully use euv next year in the fourth 10nm generation for dram.

Timeline of Samsung’s dram production for mobile devices
Date Module size Process Chip, speed
August 2012 2GB 30nm class 4Gbit-lpddr3, 1600Mbit / s
April 2013 2GB 20nm class (2y) 4Gbit-lpddr3, 2133Mbit / s
November 2013 3GB 20nm class (2y) 6Gbit-lpddr3, 2133Mbit / s
September 2014 3GB 20nm class (2z) 6Gbit-lpddr3, 2133Mbit / s
December 2014 4GB 20nm class (2z) 8Gbit-lpddr4, 3200Mbit / s
August 2015 6GB 20nm class (2z) 12Gbit-lpddr4, 4266Mbit / s
September 2016 8GB 10nm class (1x) 16Gbit-lpddr4, 4266Mbit / s
July 2018 8GB 10nm class (1y) 16Gbit-lpddr4x, 4266Mbit / s
March 2019 12GB 10nm class (1y) 16Gbit-lpddr4x, 4266Mbit / s
June 2019 6GB 10nm class (1y) 12Gbit-lpddr5, 5500Mbit / s
August 2020 16GB 10nm class (1z) 16Gbit-lpddr5, 6400Mbit / s
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